Narrow-Linewidth Homogeneous Optical Emitters in Diamond Nanostructures via Silicon Ion Implantation

The negatively charged silicon-vacancy (SiV^-) center in diamond is a bright source of indistinguishable single photons and a useful resource in quantum-information protocols. Until now, SiV^- centers with narrow optical linewidths and small inhomogeneous distributions of SiV^- transition frequencies have only been reported in samples doped with silicon during diamond growth. We present a technique for producing implanted SiV^- centers with nearly lifetime-limited optical linewidths and a small inhomogeneous distribution. These properties persist after nanofabrication, paving the way for the incorporation of high-quality SiV^- centers into nanophotonic devices.