Atomic transport at charged graphene: why hydrogen and oxygen are so different
Abstract
Using density-functional calculations, we show that electron or hole doped graphene can strongly change the mobility of adsorbed atoms H and O. Interestingly, charge doping affects the diffusion of H and O in the opposite way, namely, electron doping increases/reduces while hole doping reduces/increases the diffusion barrier of H/O, respectively. Specifically, on neutral graphene the diffusion barriers of O and H are 0.74 and 1.01 eV, which are, upon a hole doping of $+5.9\times10^{13}$ cm$^{-2}$, 0.90 and 0.77 eV, and upon an electron doping of $-5.9\times10^{13}$ cm$^{-2}$, 0.38 and 1.36 eV, respectively. This means, within the harmonic transition state theory, at room temperature, the diffusion rate of O can be decreased or increased by 470 or 2.2$\times 10^7$ times, and that of H can be increased or decreased by $10^5$ or $7\times 10^7$ times, by that hole or electron doping level. The difference between the H and O cases is interpreted in terms of the difference in geometric and bonding changes upon charge doping.
- Publication:
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arXiv e-prints
- Pub Date:
- December 2015
- DOI:
- 10.48550/arXiv.1512.02971
- arXiv:
- arXiv:1512.02971
- Bibcode:
- 2015arXiv151202971N
- Keywords:
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- Physics - Computational Physics;
- Condensed Matter - Materials Science
- E-Print:
- This paper has been withdrawn by the authors for the reasons as follows. The first draft was written to be submitted to a journal that our group has aimed at. However, we have decided to submit the paper to the other journals. The paper is therefore reformatted a little, though its main content is kept nearly intact. We also intend not to keep a new updated version of the manuscript on arXiv