Electronic and magnetic properties of dopant atoms in SnSe monolayer: a first-principles study
Abstract
SnSe monolayer with orthorhombic Pnma GeS structure is an important two-dimensional (2D) indirect band gap material at room temperature. Based on first-principles density functional theory calculations, we present systematic studies on the electronic and magnetic properties of X (X = Ga, In, As, Sb) atoms doped SnSe monolayer. The calculated electronic structures show that Ga-doped system maintains semiconducting property while In-doped SnSe monolayer is half-metal. The As- and Sb- doped SnSe systems present the characteristics of n-type semiconductor. Moreover, all considered substitutional doping cases induce magnetic ground states with the magnetic moment of 1{\mu}B. In addition, the calculated formation energies also show that four types of doped systems are thermodynamic stable. These results provide a new route for the potential applications of doped SnSe monolayer in 2D photoelectronic and magnetic semiconductor devices.
- Publication:
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arXiv e-prints
- Pub Date:
- December 2015
- DOI:
- 10.48550/arXiv.1512.01228
- arXiv:
- arXiv:1512.01228
- Bibcode:
- 2015arXiv151201228W
- Keywords:
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- Physics - Computational Physics;
- Condensed Matter - Materials Science
- E-Print:
- 7 pages, 9 figures