Field-Effect Transistors with Submicrometer Gate Lengths Fabricated from LaAlO3-SrTiO3 -Based Heterostructures
Abstract
The possible existence of short-channel effects in oxide field-effect transistors is investigated by exploring field-effect transistors with various gate lengths fabricated from LaAlO3-SrTiO3 heterostructures. The studies reveal the existence of channel-length modulation and drain-induced barrier lowering for gate lengths below 1 μ m , with a characteristic behavior comparable to semiconducting devices. With the fabrication of field-effect transistors with gate lengths as small as 60 nm, the results demonstrate the possibility to fabricate by electron-beam lithography functional devices based on complex oxides with characteristic lengths of several tens of nanometers.
- Publication:
-
Physical Review Applied
- Pub Date:
- December 2015
- DOI:
- 10.1103/PhysRevApplied.4.064003
- arXiv:
- arXiv:1511.07680
- Bibcode:
- 2015PhRvP...4f4003W
- Keywords:
-
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science;
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- To be published in Phys. Rev. Applied