Theoretical and experimental investigation of optical absorption anisotropy in β-Ga2O3
Abstract
The question of optical bandgap anisotropy in the monoclinic semiconductor β-Ga2O3 was revisited by combining accurate optical absorption measurements with theoretical analysis, performed using different advanced computation methods. As expected, the bandgap edge of bulk β-Ga2O3 was found to be a function of light polarization and crystal orientation, with the lowest onset occurring at polarization in the ac crystal plane around 4.5-4.6 eV polarization along b unambiguously shifts the onset up by 0.2 eV. The theoretical analysis clearly indicates that the shift in the b onset is due to a suppression of the transition matrix elements of the three top valence bands at Γ point.
- Publication:
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Journal of Physics Condensed Matter
- Pub Date:
- June 2016
- DOI:
- 10.1088/0953-8984/28/22/224005
- arXiv:
- arXiv:1511.02601
- Bibcode:
- 2016JPCM...28v4005R
- Keywords:
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- Condensed Matter - Materials Science
- E-Print:
- 11 pages, 5 figures