Characterization of electronic structure of periodically strained graphene
Abstract
We induced periodic biaxial tensile strain in polycrystalline graphene by wrapping it over a substrate with repeating pillar-like structures with a periodicity of 600 nm. Using Raman spectroscopy, we determined to have introduced biaxial strains in graphene in the range of 0.4% to 0.7%. Its band structure was characterized using photoemission from valance bands, shifts in the secondary electron emission, and x-ray absorption from the carbon 1s levels to the unoccupied graphene conduction bands. It was observed that relative to unstrained graphene, strained graphene had a higher work function and higher density of states in the valence and conduction bands. We measured the conductivity of the strained and unstrained graphene in response to a gate voltage and correlated the changes in their behavior to the changes in the electronic structure. From these sets of data, we propose a simple band diagram representing graphene with periodic biaxial strain.
- Publication:
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Applied Physics Letters
- Pub Date:
- November 2015
- DOI:
- 10.1063/1.4934701
- arXiv:
- arXiv:1511.01921
- Bibcode:
- 2015ApPhL.107r3507A
- Keywords:
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- Condensed Matter - Materials Science
- E-Print:
- Appl. Phys. Lett. 107, 183507 (2015)