Room-temperature operation of Si spin MOSFET with high on/off spin signal ratio
Abstract
We experimentally demonstrate a Si spin metal-oxide-semiconductor field-effect transistor (MOSFET) that exhibits a high on/off ratio of source-drain current and spin signals at room temperature. The spin channel is nondegenerate n-type Si, and an effective application of gate voltage in the back-gated structure allows the spin MOSFET operation. This achievement can pave the way for the practical use of the Si spin MOSFET.
- Publication:
-
Applied Physics Express
- Pub Date:
- November 2015
- DOI:
- 10.7567/APEX.8.113004
- arXiv:
- arXiv:1510.06524
- Bibcode:
- 2015APExp...8k3004T
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science
- E-Print:
- 17 pages, 4 figures