Structural and electronic properties of epitaxial multilayer h-BN on Ni(111) for spintronics applications
Abstract
Hexagonal boron nitride (h-BN) is a promising material for implementation in spintronics due to a large band gap, low spin-orbit coupling, and a small lattice mismatch to graphene and to close-packed surfaces of fcc-Ni(111) and hcp-Co(0001). Epitaxial deposition of h-BN on ferromagnetic metals is aimed at small interface scattering of charge and spin carriers. We report on the controlled growth of h-BN/Ni(111) by means of molecular beam epitaxy (MBE). Structural and electronic properties of this system are investigated using cross-section transmission electron microscopy (TEM) and electron spectroscopies which confirm good agreement with the properties of bulk h-BN. The latter are also corroborated by density functional theory (DFT) calculations, revealing that the first h-BN layer at the interface to Ni is metallic. Our investigations demonstrate that MBE is a promising, versatile alternative to both the exfoliation approach and chemical vapour deposition of h-BN.
- Publication:
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Scientific Reports
- Pub Date:
- March 2016
- DOI:
- 10.1038/srep23547
- arXiv:
- arXiv:1510.04034
- Bibcode:
- 2016NatSR...623547T
- Keywords:
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- Condensed Matter - Materials Science
- E-Print:
- text, 4 figures, and supplementary info