Electron and hole g factors in InAs/InAlGaAs self-assembled quantum dots emitting at telecom wavelengths

We extend the range of quantum dot (QD) emission energies where electron and hole g factors have been measured to the practically important telecom range. The spin dynamics in InAs/In0.5₃Al_0.24Ga_0.23As self-assembled QDs with emission wavelengths at about 1.6 μ m grown on InP substrate is investigated by pump-probe Faraday rotation spectroscopy in a magnetic field. Pronounced oscillations on two different frequencies, corresponding to the QD electron and hole spin precessions about the field, are observed from which the corresponding g factors are determined. The electron g factor of about -1.9 has the largest negative value so far measured for III-V QDs by optical methods. This value, as well as the g factors reported for other III-V QDs, differ from those expected for bulk semiconductors at the same emission energies, and this difference increases significantly for decreasing energies.