Excitonic instability of three-dimensional gapless semiconductors: Large-N theory
Abstract
Three-dimensional gapless semiconductors with quadratic band touching, such as HgTe, α -Sn, or Pr2Ir2O7 , are believed to display a non-Fermi-liquid ground state due to long-range electron-electron interaction. We argue that this state is inherently unstable towards spontaneous formation of a (topological) excitonic insulator. The instability can be parameterized by a critical fermion number Nc. For N <Nc the rotational symmetry is spontaneously broken, the system develops a gap in the spectrum, and features a finite nematic order parameter. To leading order in the 1 /N expansion and in the static approximation, the analogy with the problem of dynamical mass generation in (2+1)-dimensional quantum electrodynamics yields Nc=16 /[3 π (π -2 ) ] . Taking the important dynamical screening effects into account, we find that Nc≥2.6 (2 ) and therefore safely above the physical value of N =1 . Some experimental consequences of the nematic ground state are discussed.
- Publication:
-
Physical Review B
- Pub Date:
- April 2016
- DOI:
- 10.1103/PhysRevB.93.165109
- arXiv:
- arXiv:1509.01737
- Bibcode:
- 2016PhRvB..93p5109J
- Keywords:
-
- Condensed Matter - Strongly Correlated Electrons;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- High Energy Physics - Theory
- E-Print:
- 6 pages, 1 figure, v2: section on experimental implications expanded, references added, published version