Electric field-induced superconducting transition of insulating FeSe thin film at 35 K
Abstract
One of the key strategies for obtaining higher superconducting critical temperature (Tc) is to dope carriers into an insulator parent material with strong electron correlation. Here, we examined electrostatic carrier doping to insulator-like thin (∼10-nm-thick) FeSe epitaxial films using an electric double-layer transistor (EDLT) structure. The maximum Tc obtained is 35 K, which is 4× higher than that of bulk FeSe. This result demonstrates that EDLTs are useful tools to explore the ultimate Tc for insulating parent materials, and opens a way to explore high-Tc superconductivity, where carrier doping is difficult by conventional chemical substitution.
- Publication:
-
Proceedings of the National Academy of Science
- Pub Date:
- April 2016
- DOI:
- 10.1073/pnas.1520810113
- arXiv:
- arXiv:1508.07689
- Bibcode:
- 2016PNAS..113.3986H
- Keywords:
-
- electric double-layer transistor;
- iron-based superconductors;
- high-density carrier accumulation;
- Physical Sciences,Physics;
- Condensed Matter - Superconductivity
- E-Print:
- PNAS Early Edition