Pressure-induced electronic topological transition in Sb2S3
Abstract
We report the high-pressure vibrational properties and a pressure-induced electronic topological transition in the wide bandgap semiconductor Sb2S3 (E g = 1.7-1.8 eV) using Raman spectroscopy, resistivity and x-ray diffraction (XRD) studies. In this report, high-pressure Raman spectroscopy and resistivity studies of Sb2S3 have been carried out to 22 GPa and 11 GPa, respectively. We observed the softening of phonon modes A\text{g}2 , A\text{g}3 and B 2g and a sharp anomaly in their line widths at 4 GPa. The resistivity studies corroborate this anomaly around similar pressures. The changes in resistivity as well as Raman line widths can be ascribed to the strong phonon-phonon coupling, indicating clear evidence of isostructural electronic topological transition in Sb2S3. The previously reported pressure dependence of a/c ratio plot obtained also showed a minimum at ~5 GPa consistent with our high-pressure Raman and resistivity results.
- Publication:
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Journal of Physics Condensed Matter
- Pub Date:
- January 2016
- DOI:
- 10.1088/0953-8984/28/1/015602
- arXiv:
- arXiv:1508.02516
- Bibcode:
- 2016JPCM...28a5602S
- Keywords:
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- Condensed Matter - Materials Science
- E-Print:
- 24 pages, 6 Figures, 2 tables submitted for publication