TID-Effect Compensation and Sensor-Circuit Cross-Talk Suppression in Double-SOI Devices
Abstract
We are developing double silicon-on-insulator (DSOI) pixel sensors for various applications such as for high-energy experiments. The performance of DSOI devices has been evaluated including total ionization damage (TID) effect compensation in transistors using a test-element-group (TEG) up to 2 MGy and in integration-type sensors up to 100 kGy. In this article, successful TID compensation in a pixel-ASD-readout-circuit is shown up to 100 kGy for the application of DSOI to counting-type sensors. The cross-talk suppression in DSOI is being evaluated. These results encourage us that DSOI sensors are applicable to future high-energy experiments such as the BELLE-II experiment or the ILC experiment.
- Publication:
-
arXiv e-prints
- Pub Date:
- July 2015
- DOI:
- 10.48550/arXiv.1507.07035
- arXiv:
- arXiv:1507.07035
- Bibcode:
- 2015arXiv150707035H
- Keywords:
-
- Physics - Instrumentation and Detectors
- E-Print:
- Proceedings of International Workshop on SOI Pixel Detector (SOIPIX2015), Tohoku University, Sendai, Japan, 3-6, June, 2015. C15-06-03