Sequential write-read operations in FeRh antiferromagnetic memory
Abstract
B2-ordered FeRh has been known to exhibit antiferromagnetic-ferromagnetic (AF-F) phase transitions in the vicinity of room temperature. Manipulation of the Néel order via AF-F phase transition and recent experimental observation of the anisotropic magnetoresistance in antiferromagnetic FeRh has proven that FeRh is a promising candidate for antiferromagnetic memory material. In this work, we demonstrate sequential write and read operations in antiferromagnetic memory resistors made of B2-orderd FeRh thin films by a magnetic field and electric current only, which open a realistic pathway towards operational antiferromagnetic memory devices.
- Publication:
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Applied Physics Letters
- Pub Date:
- September 2015
- DOI:
- arXiv:
- arXiv:1507.06138
- Bibcode:
- 2015ApPhL.107l2403M
- Keywords:
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- Condensed Matter - Materials Science
- E-Print:
- doi:10.1063/1.4931567