Modulating carrier and sideband coupling strengths in a standing-wave gate beam
Abstract
We control the relative coupling strength of carrier and first-order motional sideband interactions of a trapped ion by placing it in a resonant optical standing wave. Our configuration uses the surface of a microfabricated chip trap as a mirror, avoiding technical challenges of in-vacuum optical cavities. Displacing the ion along the standing wave, we show a periodic suppression of the carrier and sideband transitions with the cycles for the two cases 180∘ out of phase with each other. This technique allows for the suppression of off-resonant carrier excitations when addressing the motional sidebands, and has applications in quantum simulation and quantum control. Using the standing-wave fringes, we measure the relative ion height as a function of applied electric field, allowing for a precise measurement of ion displacement and, combined with measured micromotion amplitudes, a validation of trap numerical models.
- Publication:
-
Physical Review A
- Pub Date:
- December 2015
- DOI:
- 10.1103/PhysRevA.92.061402
- arXiv:
- arXiv:1507.00381
- Bibcode:
- 2015PhRvA..92f1402D
- Keywords:
-
- 37.10.Ty;
- 03.67.Lx;
- 32.80.Qk;
- Ion trapping;
- Quantum computation;
- Coherent control of atomic interactions with photons;
- Quantum Physics;
- Physics - Atomic Physics
- E-Print:
- 5 pages, 4 figures