Resonant second-harmonic generation in a ballistic graphene transistor with an ac-driven gate

We report a theoretical study of time-dependent transport in a ballistic graphene field effect transistor. We develop a model based on Floquet theory describing Dirac electron transmission through a harmonically driven potential barrier. Photon-assisted tunneling results in excitation of quasibound states at the barrier. Under resonance conditions, the excitation of the quasibound states leads to promotion of higher-order sidebands and, in particular, an enhanced second harmonic of the source-drain conductance. The resonances in the main transmission channel are of the Fano form, while they are of the Breit-Wigner form for sidebands. For weak ac drive strength Z₁, the dynamic Stark shift scales as Z₁⁴, while the resonance broadens as Z₁². We discuss the possibility of utilizing the resonances in prospective ballistic high-frequency devices, in particular frequency doublers operating at high frequencies and low temperatures.