Designing isoelectronic counterparts to layered group V semiconductors
Abstract
In analogy to III-V compounds, which have significantly broadened the scope of group IV semiconductors, we propose IV-VI compounds as isoelectronic counterparts to layered group V semiconductors. Using {\em ab initio} density functional theory, we study yet unrealized structural phases of silicon mono-sulfide (SiS). We find the black-phosphorus-like $\alpha$-SiS to be almost equally stable as the blue-phosphorus-like $\beta$-SiS. Both $\alpha$-SiS and $\beta$-SiS monolayers display a significant, indirect band gap that depends sensitively on the in-layer strain. Unlike 2D semiconductors of group V elements with the corresponding nonplanar structure, different SiS allotropes show a strong polarization either within or normal to the layers. We find that SiS may form both lateral and vertical heterostructures with phosphorene at a very small energy penalty, offering an unprecedented tunability in structural and electronic properties of SiS-P compounds.
- Publication:
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arXiv e-prints
- Pub Date:
- May 2015
- DOI:
- 10.48550/arXiv.1506.00513
- arXiv:
- arXiv:1506.00513
- Bibcode:
- 2015arXiv150600513Z
- Keywords:
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- Condensed Matter - Materials Science;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 7 pages, 5 figures