Defect-induced negative magnetoresistance and surface state robustness in the topological insulator BiSbTeS e2
Abstract
Absence of backscattering and occurrence of weak antilocalization are two characteristic features of topological insulators. We find that the introduction of defects results in the appearance of a negative contribution to magnetoresistance (MR) in the topological insulator BiSbTeS e2 at temperatures below 50 K. Our analysis shows that the negative MR originates from an increase in the density of defect states created by the introduction of disorder, which leaves the surface states unaffected. We find a decrease in the magnitude of the negative MR contribution with increasing temperature and a robustness of the topological surface states to external disorder.
- Publication:
-
Physical Review B
- Pub Date:
- December 2014
- DOI:
- 10.1103/PhysRevB.90.235427
- arXiv:
- arXiv:1506.00208
- Bibcode:
- 2014PhRvB..90w5427B
- Keywords:
-
- 73.25.+i;
- 73.20.-r;
- Surface conductivity and carrier phenomena;
- Electron states at surfaces and interfaces;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- Physical Review B 90, 235427 (2014)