Strain tuning of electronic structure in B i4T i3O12-LaCo O3 epitaxial thin films
Abstract
We investigated the crystal and electronic structures of ferroelectric B i4T i3O12 single-crystalline thin films site-specifically substituted with LaCo O3 (LCO). The epitaxial films were grown by pulsed laser epitaxy on NdGa O3 and SrTi O3 substrates to vary the degree of strain. With increasing the LCO substitution, we observed a systematic increase in the c -axis lattice constant of the Aurivillius phase related with the modification of pseudo-orthorhombic unit cells. These compositional and structural changes resulted in a systematic decrease in the band gap, i.e., the optical transition energy between the oxygen 2 p and transition-metal 3 d states, based on a spectroscopic ellipsometry study. In particular, the Co 3 d state seems to largely overlap with the Ti t2 g state, decreasing the band gap. Interestingly, the applied tensile strain facilitates the band-gap narrowing, demonstrating that epitaxial strain is a useful tool to tune the electronic structure of ferroelectric transition-metal oxides.
- Publication:
-
Physical Review B
- Pub Date:
- May 2015
- DOI:
- 10.1103/PhysRevB.91.174101
- arXiv:
- arXiv:1505.02861
- Bibcode:
- 2015PhRvB..91q4101C
- Keywords:
-
- 73.61.-r;
- 77.84.-s;
- 61.05.cp;
- Electrical properties of specific thin films;
- Dielectric piezoelectric ferroelectric and antiferroelectric materials;
- X-ray diffraction;
- Condensed Matter - Materials Science
- E-Print:
- 17 pages including 4 figures