Transport through an impurity tunnel coupled to a Si/SiGe quantum dot
Abstract
Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here, we report the characterization of a quantum dot coupled to a localized electronic state and present evidence of controllable coupling between the quantum dot and the localized state. A set of measurements of transport through the device enable the determination that the most likely location of the localized state is consistent with a location in the quantum well near the edge of the quantum dot. Our results are consistent with a gate-voltage controllable tunnel coupling, which is an important building block for hybrid donor and gate-defined quantum dot devices.
- Publication:
-
Applied Physics Letters
- Pub Date:
- September 2015
- DOI:
- 10.1063/1.4930909
- arXiv:
- arXiv:1505.02132
- Bibcode:
- 2015ApPhL.107j3112F
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics;
- Quantum Physics
- E-Print:
- 5 pages, 3 figures