Metallic state of low-mobility silicon at high carrier density induced by an ionic liquid
Abstract
High-mobility and dilute two-dimensional electron systems exhibit metallic behavior down to the lowest experimental temperatures. In studies of ionic liquid gated insulating silicon, we have observed transitions to a metallic state in low-mobility samples at much higher areal carrier densities than found for samples of high mobility. We have also observed a mobility peak in metallic samples as the carrier density was increased beyond 1013cm-2 .
- Publication:
-
Physical Review B
- Pub Date:
- June 2015
- DOI:
- 10.1103/PhysRevB.91.241304
- arXiv:
- arXiv:1505.00656
- Bibcode:
- 2015PhRvB..91x1304N
- Keywords:
-
- 71.30.+h;
- 72.15.Rn;
- 72.60.+g;
- 73.40.Mr;
- Metal-insulator transitions and other electronic transitions;
- Localization effects;
- Mixed conductivity and conductivity transitions;
- Semiconductor-electrolyte contacts;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science
- E-Print:
- doi:10.1103/PhysRevB.91.241304