Anisotropic magnetocapacitance in ferromagnetic-plate capacitors
Abstract
The capacitance of a parallel-plate capacitor can depend on the applied magnetic field. Previous studies have identified capacitance changes induced via classical Lorentz force or spin-dependent Zeeman effects. Here we measure a magnetization direction-dependent capacitance in parallel-plate capacitors where one plate is a ferromagnetic semiconductor, gallium manganese arsenide. This anisotropic magnetocapacitance is due to the anisotropy in the density of states dependent on the magnetization through the strong spin-orbit interaction.
- Publication:
-
Physical Review B
- Pub Date:
- April 2015
- DOI:
- 10.1103/PhysRevB.91.140409
- arXiv:
- arXiv:1505.00170
- Bibcode:
- 2015PhRvB..91n0409H
- Keywords:
-
- 75.50.Pp;
- 75.70.Tj;
- 85.75.Ss;
- Magnetic semiconductors;
- Magnetic field sensors using spin polarized transport;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 5 pages, 4 figures