Hopping conduction via ionic liquid induced silicon surface states
Abstract
In order to clarify the physics of the gating of solids by ionic liquids (ILs) we have gated lightly doped p -Si, which is so well studied that it can be called the "hydrogen atom of solid state physics" and can be used as a test bed for ionic liquids. We explore the case where the concentration of induced holes at the Si surface is below 1012cm-2 , hundreds of times smaller than record values. We find that in this case an excess negative ion binds a hole on the interface between the IL and Si becoming a surface acceptor. We study the surface conductance of holes hopping between such nearest neighbor acceptors. Analyzing the acceptor concentration dependence of this conductivity, we find that the localization length of a hole is in reasonable agreement with our direct variational calculation of its binding energy. The observed hopping conductivity resembles that of well studied Na+ implanted Si MOSFETs.
- Publication:
-
Physical Review B
- Pub Date:
- August 2015
- DOI:
- 10.1103/PhysRevB.92.085424
- arXiv:
- arXiv:1505.00065
- Bibcode:
- 2015PhRvB..92h5424N
- Keywords:
-
- 72.20.Ee;
- 78.30.cd;
- 73.20.-r;
- Mobility edges;
- hopping transport;
- Electron states at surfaces and interfaces;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Disordered Systems and Neural Networks
- E-Print:
- Phys. Rev. B 92, 085424 (2015)