Growth-induced electron mobility enhancement at the LaAlO3/SrTiO3 interface
Abstract
We have studied the electronic properties of the 2D electron liquid present at the LaAlO3/SrTiO3 interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650 °C exhibit the highest low temperature mobility ( ≈ 10 000 cm 2 V - 1 s - 1 ) and the lowest sheet carrier density ( ≈ 5 × 10 12 cm - 2 ). These samples show metallic behavior and Shubnikov-de Haas oscillations in their magnetoresistance. Samples grown at higher temperatures (800-900 °C) display carrier densities in the range of ≈ 2 - 5 × 10 13 cm - 2 and mobilities of ≈ 1000 cm 2 V - 1 s - 1 at 4 K. Reducing their carrier density by field effect to 8 × 10 12 cm - 2 lowers their mobilities to ≈ 50 cm 2 V - 1 s - 1 bringing the conductance to the weak-localization regime.
- Publication:
-
Applied Physics Letters
- Pub Date:
- February 2015
- DOI:
- 10.1063/1.4907676
- arXiv:
- arXiv:1503.05906
- Bibcode:
- 2015ApPhL.106e1604F
- Keywords:
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- Condensed Matter - Materials Science
- E-Print:
- Appl. Phys. Lett. 106, 051604 (2015)