Electrically tunable hole g factor of an optically active quantum dot for fast spin rotations
Abstract
We report a large g factor tunability of a single hole spin in an InGaAs quantum dot via an electric field. The magnetic field lies in the in-plane direction x , the direction required for a coherent hole spin. The electrical field lies along the growth direction z and is changed over a large range, 100 kV/cm. Both electron and hole g factors are determined by high resolution laser spectroscopy with resonance fluorescence detection. This, along with the low electrical-noise environment, gives very high quality experimental results. The hole g factor ghx depends linearly on the electric field Fz,d ghx/d Fz=(8.3 ±1.2 ) ×10-4 cm/kV, whereas the electron g factor gex is independent of electric field d gex/d Fz=(0.1 ±0.3 ) ×10-4 cm/kV (results averaged over a number of quantum dots). The dependence of ghx on Fz is well reproduced by a 4 ×4 k .p model demonstrating that the electric field sensitivity arises from a combination of soft hole confining potential, an In concentration gradient, and a strong dependence of material parameters on In concentration. The electric field sensitivity of the hole spin can be exploited for electrically driven hole spin rotations via the g tensor modulation technique and based on these results, a hole spin coupling as large as ∼1 GHz can be envisaged.
- Publication:
-
Physical Review B
- Pub Date:
- April 2015
- DOI:
- 10.1103/PhysRevB.91.165304
- arXiv:
- arXiv:1412.4238
- Bibcode:
- 2015PhRvB..91p5304P
- Keywords:
-
- 78.67.Hc;
- 73.21.La;
- 71.70.Ej;
- Quantum dots;
- Spin-orbit coupling Zeeman and Stark splitting Jahn-Teller effect;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 8 pages, 4 figures