Thermal and electrical quantum Hall effects in ferromagnet/topological insulator/ferromagnet junction
Abstract
We present a theoretical description for a class of experimental setups that measure quantum Hall coefficients in ferromagnet/topological insulator/ferromagnet (FM-TI-FM) junctions. We predict that, varying the magnetization direction in ferromagnets, one can change the induced Hall voltage and transverse temperature gradient from the maximal values, corresponding to the quantized Hall coefficients, down to their complete suppression to zero. We provide detailed analysis of thermal and electrical Hall resistances as functions of the magnetization directions in ferromagnets, the spin scattering time in TI, and geometrical positions of FM leads and measurement contacts. We find a special symmetric configuration of the experimental setup, at which the quantum Hall coefficients are independent of spin scattering.
- Publication:
-
Physical Review B
- Pub Date:
- May 2015
- DOI:
- 10.1103/PhysRevB.91.195105
- arXiv:
- arXiv:1412.1697
- Bibcode:
- 2015PhRvB..91s5105C
- Keywords:
-
- 72.25.Dc;
- 73.43.-f;
- 85.75.-d;
- Spin polarized transport in semiconductors;
- Quantum Hall effects;
- Magnetoelectronics;
- spintronics: devices exploiting spin polarized transport or integrated magnetic fields;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 6 pages, 6 figures. This is an extended version of arXiv:1401.4986. The theoretical approach is refined. New results concerning various experimental geometries are presented