Origin of spin gapless semiconductor behavior in CoFeCrGa: Theory and Experiment

Despite a plethora of materials suggested for spintronic applications, a new class of materials has emerged, namely spin gapless semiconductors (SGS), which offers potentially more advantageous properties than existing ones. These magnetic semiconductors exhibit a finite band gap for one spin channel and a closed gap for the other. Here, supported by electronic-structure calculations, we report evidence of SGS behavior in equiatomic quaternary CoFeCrGa, having a cubic Heusler (prototype LiMgPdSn) structure but exhibiting chemical disorder (DO₃ structure). CoFeCrGa is found to transform from SGS to half-metallic phase under pressure, which is attributed to unique electronic-structure features. The saturation magnetization (M_S) obtained at 8 K agrees with the Slater-Pauling rule and the Curie temperature (T_C) is found to exceed 400 K . Carrier concentration (up to 250 K ) and electrical conductivity are observed to be nearly temperature independent, prerequisites for SGS. The anomalous Hall coefficient is estimated to be 185 S /cm at 5 K . Considering the SGS properties and high T_C, this material appears to be promising for spintronic applications.