Shock-waves and commutation speed of memristors
Abstract
Progress of silicon based technology is nearing its physical limit, as minimum feature size of components is reaching a mere 10 nm. The resistive switching behaviour of transition metal oxides and the associated memristor device is emerging as a competitive technology for next generation electronics. Significant progress has already been made in the past decade and devices are beginning to hit the market; however, it has been mainly the result of empirical trial and error. Hence, gaining theoretical insight is of essence. In the present work we report the striking result of a connection between the resistive switching and {\em shock wave} formation, a classic topic of non-linear dynamics. We argue that the profile of oxygen vacancies that migrate during the commutation forms a shock wave that propagates through a highly resistive region of the device. We validate the scenario by means of model simulations and experiments in a manganese-oxide based memristor device. The shock wave scenario brings unprecedented physical insight and enables to rationalize the process of oxygen-vacancy-driven resistive change with direct implications for a key technological aspect -- the commutation speed.
- Publication:
-
arXiv e-prints
- Pub Date:
- November 2014
- DOI:
- 10.48550/arXiv.1411.4198
- arXiv:
- arXiv:1411.4198
- Bibcode:
- 2014arXiv1411.4198T
- Keywords:
-
- Condensed Matter - Materials Science
- E-Print:
- Featured in Physics Synopsis: "Waves that Shock Resistance" (Mar. 15, 2016). http://physics.aps.org/synopsis-for/10.1103/PhysRevX.6.011028