Manipulating electronic states at oxide interfaces using focused micro X-rays from standard lab-sources
Abstract
Recently, x-ray illumination, using synchrotron radiation, has been used to manipulate defects, stimulate self-organization and to probe their structure. Here we explore a method of defect-engineering low-dimensional systems using focused laboratory-scale X-ray sources. We demonstrate an irreversible change in the conducting properties of the 2-dimensional electron gas at the interface between the complex oxide materials LaAlO3 and SrTiO3 by X-ray irradiation. The electrical resistance is monitored during exposure as the irradiated regions are driven into a high resistance state. Our results suggest attention shall be paid on electronic structure modification in X-ray spectroscopic studies and highlight large-area defect manipulation and direct device patterning as possible new fields of application for focused laboratory X-ray sources.
- Publication:
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arXiv e-prints
- Pub Date:
- November 2014
- DOI:
- 10.48550/arXiv.1411.0177
- arXiv:
- arXiv:1411.0177
- Bibcode:
- 2014arXiv1411.0177P
- Keywords:
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- Condensed Matter - Materials Science;
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- 12 pages, 4 figures