Highly resistive epitaxial Mg-doped GdN thin films
Abstract
We report the growth by molecular beam epitaxy of highly resistive GdN, using intentional doping with magnesium. Mg-doped GdN layers with resistivities of 103 Ω cm and carrier concentrations of 1016 cm-3 are obtained for films with Mg concentrations up to 5 × 1019 atoms/cm3. X-ray diffraction rocking curves indicate that Mg-doped GdN films have crystalline quality very similar to undoped GdN films, showing that the Mg doping did not affect the structural properties of the films. A decrease of the Curie temperature with decreasing the electron density is observed, supporting a recently suggested magnetic polaron scenario [F. Natali, B. J. Ruck, H. J. Trodahl, D. L. Binh, S. Vézian, B. Damilano, Y. Cordier, F. Semond, and C. Meyer, Phys. Rev. B 87, 035202 (2013)].
- Publication:
-
Applied Physics Letters
- Pub Date:
- January 2015
- DOI:
- 10.1063/1.4905598
- arXiv:
- arXiv:1410.8228
- Bibcode:
- 2015ApPhL.106b2401L
- Keywords:
-
- Condensed Matter - Materials Science;
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- doi:10.1063/1.4905598