Electrical properties of Bi-implanted amorphous chalcogenide films
Abstract
The impact of Bi implantation on the conductivity and the thermopower of amorphous chalcogenide films is investigated. Incorporation of Bi in Ge-Sb-Te and GeTe results in enhanced conductivity. The negative Seebeck coefficient confirms onset of the electron conductivity in GeTe implanted with Bi at a dose of 2x1016 cm-2. The enhanced conductivity is accompanied by defect accumulation in the films upon implantation as is inferred by using analysis of the space-charge limited current. The results indicate that native coordination defects in lone-pair semiconductors can be deactivated by means of ion implantation, and higher conductivity of the films stems from additional electrically active defects created by implantation of bismuth.
- Publication:
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arXiv e-prints
- Pub Date:
- October 2014
- DOI:
- 10.48550/arXiv.1410.5677
- arXiv:
- arXiv:1410.5677
- Bibcode:
- 2014arXiv1410.5677F
- Keywords:
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- Condensed Matter - Materials Science
- E-Print:
- This is an extended version of the results presented in Proc. SPIE 8982, 898213 (2014)