Nanoscale Electrostatic Control of Oxide Interfaces
Abstract
We develop a robust and versatile platform to define nanostructures at oxide interfaces via patterned top gates. Using LaAlO$_3$/SrTiO$_3$ as a model system, we demonstrate controllable electrostatic confinement of electrons to nanoscale regions in the conducting interface. The excellent gate response, ultra-low leakage currents, and long term stability of these gates allow us to perform a variety of studies in different device geometries from room temperature down to 50 mK. Using a split-gate device we demonstrate the formation of a narrow conducting channel whose width can be controllably reduced via the application of appropriate gate voltages. We also show that a single narrow gate can be used to induce locally a superconducting to insulating transition. Furthermore, in the superconducting regime we see indications of a gate-voltage controlled Josephson effect.
- Publication:
-
Nano Letters
- Pub Date:
- April 2015
- DOI:
- 10.1021/acs.nanolett.5b00216
- arXiv:
- arXiv:1410.2237
- Bibcode:
- 2015NanoL..15.2627G
- Keywords:
-
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- Version after peer review