Electron spin decoherence in silicon carbide nuclear spin bath
Abstract
In this Rapid Communication, we study the electron spin decoherence of single defects in silicon carbide (SiC) nuclear spin bath. We find that, although the natural abundance of 29Si (pSi=4.7 % ) is about four times larger than that of 13C (pC=1.1 % ), the electron spin coherence time of defect centers in SiC nuclear spin bath in a strong magnetic field (B >300 G ) is longer than that of nitrogen-vacancy (NV) centers in 13C nuclear spin bath in diamond. In addition to the smaller gyromagnetic ratio of 29Si, and the larger bond length in SiC lattice, a crucial reason for this counterintuitive result is the suppression of the heteronuclear-spin flip-flop process in a finite magnetic field. Our results show that electron spin of defect centers in SiC are excellent candidates for solid state spin qubit in quantum information processing.
- Publication:
-
Physical Review B
- Pub Date:
- December 2014
- DOI:
- 10.1103/PhysRevB.90.241203
- arXiv:
- arXiv:1409.4646
- Bibcode:
- 2014PhRvB..90x1203Y
- Keywords:
-
- 76.60.Lz;
- 03.65.Yz;
- 76.30.Mi;
- Spin echoes;
- Decoherence;
- open systems;
- quantum statistical methods;
- Color centers and other defects;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Quantum Physics
- E-Print:
- 6 pages, 6 figures