Atomistic mechanism of perfect alignment of nitrogen-vacancy centers in diamond
Abstract
Nitrogen-vacancy (NV) centers in diamond have attracted a great deal of attention because of their possible use in information processing and electromagnetic sensing technologies. We examined the atomistic generation mechanism for the NV defect aligned in the [111] direction of C(111) substrates. We found that N is incorporated in the C bilayers during the lateral growth arising from a sequence of kink propagation along the step edge down to [ 1 ¯ 1 ¯ 2 ] . As a result, the atomic configuration with the N-atom lone-pair pointing in the [111] direction is formed, which causes preferential alignment of NVs. Our model is consistent with recent experimental data for perfect NV alignment in C(111) substrates.
- Publication:
-
Applied Physics Letters
- Pub Date:
- December 2014
- DOI:
- 10.1063/1.4904988
- arXiv:
- arXiv:1409.2573
- Bibcode:
- 2014ApPhL.105z1601M
- Keywords:
-
- Condensed Matter - Materials Science
- E-Print:
- 5 pages, 4 figures