Undoped accumulation-mode Si/SiGe quantum dots
Abstract
We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlapping gate stack in which each electrostatic gate has a dominant and unique function -- control of individual quantum dot occupancies and of lateral tunneling into and between dots. Control of the tunneling rate between a dot and an electron bath is demonstrated over more than nine orders of magnitude and independently confirmed by direct measurement within the bandwidth of our amplifiers. The inter-dot tunnel coupling at the (0,2)<-->(1,1) charge configuration anti-crossing is directly measured to quantify the control of a single inter-dot tunnel barrier gate. A simple exponential dependence is sufficient to describe each of these tunneling processes as a function of the controlling gate voltage.
- Publication:
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arXiv e-prints
- Pub Date:
- August 2014
- DOI:
- 10.48550/arXiv.1408.0600
- arXiv:
- arXiv:1408.0600
- Bibcode:
- 2014arXiv1408.0600B
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 4 pages, 5 figures