Modulating spin transfer torque switching dynamics with two orthogonal spin-polarizers by varying the cell aspect ratio
Abstract
We study in-plane magnetic tunnel junctions with additional perpendicular polarizer for subnanosecond-current-induced switching memories. The spin-transfer-torque switching dynamics was studied as a function of the cell aspect ratio both experimentally and by numerical simulations using the macrospin model. We show that the anisotropy field plays a significant role in the dynamics, along with the relative amplitude of the two spin-torque contributions. This was confirmed by micromagnetic simulations. Real-time measurements of the reversal were performed with samples of low and high aspect ratio. For low aspect ratios, a precessional motion of the magnetization was observed and the effect of temperature on the precession coherence was studied. For high aspect ratios, we observed magnetization reversals in less than 1 ns for high enough current densities, the final state being controlled by the current direction in the magnetic tunnel junction cell.
- Publication:
-
Physical Review B
- Pub Date:
- December 2014
- DOI:
- 10.1103/PhysRevB.90.224404
- arXiv:
- arXiv:1407.6240
- Bibcode:
- 2014PhRvB..90v4404L
- Keywords:
-
- 85.70.Kh;
- 75.70.Cn;
- 75.78.-n;
- 85.75.-d;
- Magnetic thin film devices: magnetic heads;
- domain-motion devices etc.;
- Magnetic properties of interfaces;
- Magnetoelectronics;
- spintronics: devices exploiting spin polarized transport or integrated magnetic fields;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 6 pages, 7 figures