Silicon-Carbon Bond Inversions Driven by 60-keV Electrons in Graphene
Abstract
We demonstrate that 60-keV electron irradiation drives the diffusion of threefold-coordinated Si dopants in graphene by one lattice site at a time. First principles simulations reveal that each step is caused by an electron impact on a C atom next to the dopant. Although the atomic motion happens below our experimental time resolution, stochastic analysis of 38 such lattice jumps reveals a probability for their occurrence in a good agreement with the simulations. Conversions from three- to fourfold coordinated dopant structures and the subsequent reverse process are significantly less likely than the direct bond inversion. Our results thus provide a model of nondestructive and atomically precise structural modification and detection for two-dimensional materials.
- Publication:
-
Physical Review Letters
- Pub Date:
- September 2014
- DOI:
- 10.1103/PhysRevLett.113.115501
- arXiv:
- arXiv:1407.4274
- Bibcode:
- 2014PhRvL.113k5501S
- Keywords:
-
- 61.48.Gh;
- 31.15.A-;
- 68.37.Ma;
- 81.05.ue;
- Ab initio calculations;
- Scanning transmission electron microscopy;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- Article: 12 pages, 4 figures. Supplemental Material: 9 pages, 8 figures, 1 table