DMAPS: a fully depleted monolithic active pixel sensor—analog performance characterization
Abstract
Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s based on silicon substrates with a thin epitaxial layer (thickness of 10-15 μm) in which charge is collected on an electrode, albeit by disordered and slow diffusion rather than by drift in a directed electric field. As a consequence, the signal of these conventional MAPS is small (≈1000 e-) and the radiation tolerance is limited. In this paper, the development of a fully Depleted Monolithic Active Pixel Sensors (DMAPS) based on a high resistivity substrate allowing the creation of a fully depleted detection volume is presented. This concept overcomes the inherent limitations of charge collection by diffusion in the standard MAPS designs. We present results from a prototype chip EPCB01 designed in a commercial 150 nm CMOS technology. The technology provides a thin (≈50 μm) high resistivity n-type silicon substrate as well as an additional deep p-well which allows to integrate full CMOS circuitry inside the pixel. Different matrix types with several variants of collection electrodes and pixel electronics have been implemented. Measurements of the analog performance of this first implementation of DMAPS pixels are presented.
- Publication:
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Journal of Instrumentation
- Pub Date:
- February 2015
- DOI:
- 10.1088/1748-0221/10/02/P02013
- arXiv:
- arXiv:1407.0641
- Bibcode:
- 2015JInst..10P2013H
- Keywords:
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- Physics - Instrumentation and Detectors;
- High Energy Physics - Experiment
- E-Print:
- submitted to JINST