Photoluminescence of focused ion beam implanted Er3+:Y2SiO5crystals
Abstract
Erbium doped low symmetry Y$_2$SiO$_5$ crystals attract a lot of attention in perspective of quantum information applications. However, only doping of the samples during growth is available up to now, which yields a quite homogeneous doping density. In the present work, we deposit Er$^{3+}$-ions by the focused ion beam technique at Yttrium sites with several fluences in one sample. With a photoluminescence study of these locally doped Er$^{3+}$:Y$_2$SiO$_5$ crystals, we are able to evaluate the efficiency of the implantation process and develop it for the highest efficiency possible. We observe the dependence of the ion activation after the post-implantation annealing on the fluence value.
- Publication:
-
Physica Status Solidi Rapid Research Letters
- Pub Date:
- October 2014
- DOI:
- 10.1002/pssr.201409304
- arXiv:
- arXiv:1406.5371
- Bibcode:
- 2014PSSRR...8..880K
- Keywords:
-
- Condensed Matter - Materials Science;
- Physics - Optics
- E-Print:
- Phys. Status Solidi RRL (2014)