Spin-flip Raman scattering of the Γ-X mixed exciton in indirect band gap (In,Al)As/AlAs quantum dots
Abstract
The band structure of type-I (In,Al)As/AlAs quantum dots with band gap energy exceeding 1.63 eV is indirect in momentum space, leading to long-lived exciton states with potential applications in quantum information. Optical access to these excitons is provided by mixing of the Γ- and X-conduction-band valleys, for which their spins may be oriented by resonant spin-flip Raman scattering. This access is used to study the exciton spin-level structure by accurately measuring the anisotropic hole and isotropic electron g factors. The spin-flip mechanisms for the indirect exciton and its constituents as well as the underlying optical selection rules are determined. The spin-flip intensity is a reliable measure of the strength of Γ-X-valley mixing, as evidenced by both experiment and theory.
- Publication:
-
Physical Review B
- Pub Date:
- September 2014
- DOI:
- 10.1103/PhysRevB.90.125431
- arXiv:
- arXiv:1406.2684
- Bibcode:
- 2014PhRvB..90l5431D
- Keywords:
-
- 78.67.Hc;
- 73.21.La;
- 78.30.Fs;
- 85.75.-d;
- Quantum dots;
- III-V and II-VI semiconductors;
- Magnetoelectronics;
- spintronics: devices exploiting spin polarized transport or integrated magnetic fields;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 5 pages, 3 figures