Spin injection from a ferromagnet into a semiconductor in the case of a rough interface

The effect of the interface roughness on the spin injection from a ferromagnet into a semiconductor is studied theoretically. Even a small interface irregularity can lead to a significant enhancement of the injection efficiency. When a typical size of the irregularity, a , is within a domain λ_F≪a ≪λ_N , where λ_F and λ_N are the spin-diffusion lengths in the ferromagnet and semiconductor, respectively, the geometrical enhancement factor is ∼λ_N/a . The origin of the enhancement is the modification of the local electric field on small scales ∼a near the interface. We demonstrate the effect of enhancement by considering a number of analytically solvable examples of injection through curved ferromagnet-semiconductor interfaces. For a generic curved interface, the enhancement factor is ∼λ_N/R , where R is the local radius of curvature.