Influence of X-ray irradiation on the properties of the Hamamatsu silicon photomultiplier S10362-11-050C
Abstract
We have investigated the effects of X-ray irradiation to doses of 0, 200 Gy, 20 kGy, 2 MGy, and 20 MGy on the Hamamatsu silicon-photomultiplier (SiPM) S10362-11-050C. The SiPMs were irradiated without applied bias voltage. From current-voltage, capacitance/conductance-voltage, capacitance/conductance-frequency, pulse-shape, and pulse-area measurements, the SiPM characteristics below and above breakdown voltage were determined. Significant changes of some SiPM parameters are observed. Up to a dose of 20 kGy the performance of the SiPMs is hardly affected by X-ray radiation damage. For doses of 2 and 20 MGy the SiPMs operate with hardly any change in gain, but with a significant increase in dark-count rate and cross-talk probability.
- Publication:
-
Nuclear Instruments and Methods in Physics Research A
- Pub Date:
- October 2014
- DOI:
- 10.1016/j.nima.2014.05.112
- arXiv:
- arXiv:1404.3206
- Bibcode:
- 2014NIMPA.762..149X
- Keywords:
-
- XFEL;
- Silicon photomultipliers;
- MPPC;
- GAPD;
- X-ray radiation damage;
- Physics - Instrumentation and Detectors;
- High Energy Physics - Experiment
- E-Print:
- 21 pages,30 figures
