Large Fermi energy modulation in graphene transistors with high-pressure O2-annealed Y2O3 topgate insulators
Abstract
We demonstrate a considerable suppression of the low-field leakage through a Y2O3 topgate insulator on graphene by applying high-pressure O2 at 100 atm during post-deposition annealing (HP-PDA). Consequently, the quantum capacitance measurement for the monolayer graphene reveals the largest Fermi energy modulation (EF = ∼0.52 eV, i.e., the carrier density of ∼2 × 1013 cm-2) in the solid-state topgate insulators reported so far. HP-PDA is the robust method to improve the electrical quality of high-k insulators on graphene.
- Publication:
-
Applied Physics Letters
- Pub Date:
- February 2014
- DOI:
- 10.1063/1.4867202
- arXiv:
- arXiv:1402.6060
- Bibcode:
- 2014ApPhL.104h3519K
- Keywords:
-
- Condensed Matter - Materials Science
- E-Print:
- will appear in APL