Stark shift and field ionization of arsenic donors in 28Si-silicon-on-insulator structures
Abstract
We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified 28Si-SOI layers using such structures. The back gate is implemented using MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer, enabling large and uniform electric fields up to 2 V/μm to be applied across the SOI layer. Utilizing this structure, we measure the Stark shift parameters of arsenic donors embedded in the 28Si-SOI layer and find a contact hyperfine Stark parameter of ηa = -1.9 ± 0.7 × 10-3 μm2/V2. We also demonstrate electric-field driven dopant ionization in the SOI device layer, measured by electron spin resonance.
- Publication:
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Applied Physics Letters
- Pub Date:
- May 2014
- DOI:
- 10.1063/1.4876175
- arXiv:
- arXiv:1401.6885
- Bibcode:
- 2014ApPhL.104s3502L
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 5 pages, 3 figures