Room-Temperature Ferrimagnet with Frustrated Antiferroelectricity: Promising Candidate Toward Multiple-State Memory
Abstract
On the basis of first-principles calculations, we show that the M-type hexaferrite BaFe12O19 exhibits frustrated antiferroelectricity associated with its trigonal bipyramidal Fe3+ sites. The ferroelectric state of BaFe12O19, reachable by applying an external electric field to the antiferroelectric state, can be made stable at room temperature by appropriate element substitution or strain engineering. Thus, M-type hexaferrite, as a new type of multiferoic with coexistence of antiferroelectricity and ferrimagnetism, provides a basis for studying the phenomenon of frustrated antiferroelectricity and realizing multiple-state memory devices.
- Publication:
-
Physical Review X
- Pub Date:
- January 2014
- DOI:
- 10.1103/PhysRevX.4.011035
- arXiv:
- arXiv:1401.2747
- Bibcode:
- 2014PhRvX...4a1035W
- Keywords:
-
- 75.85.+t;
- 71.20.-b;
- 75.30.Et;
- 75.50.Gg;
- Electron density of states and band structure of crystalline solids;
- Exchange and superexchange interactions;
- Ferrimagnetics;
- Condensed Matter - Materials Science
- E-Print:
- supporting material available via email. arXiv admin note: text overlap with arXiv:1210.7116 by other authors