Images of Edge Current in InAs /GaSb Quantum Wells
Abstract
Quantum spin Hall devices with edges much longer than several microns do not display ballistic transport; that is, their measured conductances are much less than e2/h per edge. We imaged edge currents in InAs /GaSb quantum wells with long edges and determined an effective edge resistance. Surprisingly, although the effective edge resistance is much greater than h/e2, it is independent of temperature up to 30 K within experimental resolution. Known candidate scattering mechanisms do not explain our observation of an effective edge resistance that is large yet temperature independent.
- Publication:
-
Physical Review Letters
- Pub Date:
- July 2014
- DOI:
- 10.1103/PhysRevLett.113.026804
- arXiv:
- arXiv:1401.1531
- Bibcode:
- 2014PhRvL.113b6804S
- Keywords:
-
- 73.63.-b;
- 72.20.Dp;
- 85.25.Dq;
- Electronic transport in nanoscale materials and structures;
- General theory scattering mechanisms;
- Superconducting quantum interference devices;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- Version accepted to Physical Review Letters (http://prl.aps.org/). 12 pages, 3 figures. Supplementary Online Materials available at http://stanford.edu/group/moler/papers/Spanton_InAsGaSb_imaging_SI_v2.pdf