High-frequency characterization of thermionic charge transport in silicon-on-insulator nanowire transistors
Abstract
We report on DC and microwave electrical transport measurements in silicon-on-insulator nano-transistors at low and room temperature. At low source-drain voltage, the DC current and radio frequency response show signs of conductance quantization. We attribute this to Coulomb blockade resulting from barriers formed at the spacer-gate interfaces. We show that at high bias transport occurs thermionically over the highest barrier: Transconductance traces obtained from microwave scattering-parameter measurements at liquid helium and room temperature are accurately fitted by a thermionic model. From the fits we deduce the ratio of gate capacitance and quantum capacitance, as well as the electron temperature.
- Publication:
-
Applied Physics Letters
- Pub Date:
- January 2014
- DOI:
- 10.1063/1.4863538
- arXiv:
- arXiv:1312.2749
- Bibcode:
- 2014ApPhL.104d3106B
- Keywords:
-
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- APL 104, 043106 (2014)