Bilayer graphene Hall bar with a pn-junction
Abstract
We investigate the magnetic field dependence of the Hall and the bend resistances for a ballistic Hall bar structure containing a pn-junction sculptured from a bilayer of graphene. The electric response is obtained using the billiard model, and we investigate the cases of bilayer graphene with and without a band gap. Two different conduction regimes are possible: (i) both sides of the junction have the same carrier type and (ii) one side of the junction is n-type while the other one is p-type. The first case shows Hall plateau-like features in the Hall resistance that fade away as the band gap opens. The second case exhibits a bend resistance that is asymmetric in magnetic field as a consequence of snake states along the pn-interface, where the maximum is shifted away from zero magnetic field.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- September 2013
- DOI:
- 10.1063/1.4821264
- arXiv:
- arXiv:1312.1164
- Bibcode:
- 2013JAP...114k3706M
- Keywords:
-
- ballistic transport;
- graphene;
- Hall effect;
- p-n junctions;
- 72.80.Vp;
- 73.40.Kp;
- 73.23.Ad;
- III-V semiconductor-to-semiconductor contacts p-n junctions and heterojunctions;
- Ballistic transport;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- J. Appl. Phys. 114, 113706 (2013)