Liquid and Back Gate Coupling Effect: Toward Biosensing with Lowest Detection Limit
Abstract
We employ noise spectroscopy and transconductance measurements to establish the optimal regimes of operation for our fabricated silicon nanowire field-effect transistors (Si NW FETs) sensors. A strong coupling between the liquid gate and back gate (the substrate) has been revealed and used for optimisation of signal-to-noise ratio in sub-threshold as well as above-threshold regimes. Increasing the sensitivity of Si NW FET sensors above the detection limit has been predicted and proven by direct experimental measurements.
- Publication:
-
Nano Letters
- Pub Date:
- February 2014
- DOI:
- 10.1021/nl403748x
- arXiv:
- arXiv:1311.7628
- Bibcode:
- 2014NanoL..14..578P
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 18 pages, 6 figures