Hole doped Dirac states in silicene by biaxial tensile strain
Abstract
The effects of biaxial tensile strain on the structure, electronic states, and mechanical properties of silicene are studied by ab-initio calculations. Our results show that up to 5% strain the Dirac cone remains essentially at the Fermi level, while higher strain induces hole doped Dirac states because of weakened Si-Si bonds. We demonstrate that the silicene lattice is stable up to 17% strain. It is noted that the buckling first decreases with the strain (up to 10%) and then increases again, which is accompanied by a band gap variation. We also calculate the Grüneisen parameter and demonstrate a strain dependence similar to that of graphene.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- March 2013
- DOI:
- 10.1063/1.4794812
- arXiv:
- arXiv:1310.7411
- Bibcode:
- 2013JAP...113j4305K
- Keywords:
-
- ab initio calculations;
- buckling;
- doping;
- elemental semiconductors;
- energy gap;
- Fermi level;
- silicon;
- 62.20.mq;
- 71.15.Pd;
- 71.20.Mq;
- 73.20.At;
- 81.40.Lm;
- 61.72.uf;
- Buckling;
- Molecular dynamics calculations and other numerical simulations;
- Elemental semiconductors;
- Surface states band structure electron density of states;
- Deformation plasticity and creep;
- Ge and Si;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science
- E-Print:
- 10 pages, 5 figures, and 1 table